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SSM3K12T
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
SSM3K12T
DC-DC Converter High Speed Switching Applications
* * * Small Package Low ON-resistance High speed Unit: mm
: Ron = 95 m (max) (@VGS = 10 V) : Ron = 145 m (max) (@VGS = 4.5 V) : ton = 21 ns : toff = 16 ns
Maximum Ratings (Ta = 25C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 20 3.0 6.0 0.7 1.25 150 -55~150 Unit V V A W C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-3S1A
Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature.
Weight: 10 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
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SSM3K12T
Marking
3
Equivalent Circuit
3
KDJ
1
2
1
2
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth |Yfs| Test Condition VGS = 16 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 1.5 A ID = 1.5 A, VGS = 10 V Drain-Source ON resistance RDS (ON) ID = 1.5 A, VGS = 4.5 V ID = 1.5 A, VGS = 4.0 V Total gate charge Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Qg Ciss Crss Coss tr ton tf toff VDD = 15 V, ID = 1.5 A VGS = 0~4 V, RG = 10 W (Note 3) (Note 3) (Note 3) (Note 3) Min 3/4 30 3/4 1.1 1.8 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3.2 78 117 135 2.6 120 20 68 13 21 3.6 16 Max 1 3/4 1 1.8 3/4 95 145 175 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 ns nC pF pF pF mW Unit mA V mA V S
VDD = 24 V, ID = 3 A, VGS = 4 V VDS = 15 V, VGS = 0, f = 1 MHz VDS = 15 V, VGS = 0, f = 1 MHz VDS = 15 V, VGS = 0, f = 1 MHz
Note 3 : Pulse test
Switching Time Test Circuit
(a) Test circuit
10 ms 4V 0 IN RG RL ID OUT VDD = 15 V RG = 10 W D.U. < 1% = VIN: tr, tf < 5 ns Common source Ta = 25C
(b) VIN
4V 10%
90%
(c) VOUT
0 VDD
10% 90% tr ton toff tf
VDD
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 4 V or higher to turn on this product.
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SSM3K12T
ID - VDS
6 10 10000 4.5 4 Common Source Ta = 25C 1000
ID - VGS
5
(mA)
(A)
100C 100 Ta = -25C 25C
4
3.6
ID
Drain current
Drain current
3
VGS = 3.3 V
ID
10 2 3.0 2.8 2.6 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0 2 2.5 3 1 1 0.1
Common Source VDS = 5 V 0.5 1 1.5 3.5 4 4.5
Drain-Source voltage VDS
(V)
Gate-Source voltage
VGS
(V)
RDS (ON) -ID
300 Common Source Ta = 25C 4 200 500 450
RDS (ON) - VGS
Common Source ID = 1.5 A 400 350 300 250 200 150 100 50 100C Ta = 25C -25C 5 10 15 20
250
Drain-Source on resistance RDS (ON) (mW)
150
4.5
100 VGS = 10 V 50
0 0
Drain-Source on resistance RDS (ON) (mW)
6
1
2
3
4
5
0 0
Drain current
ID
(A)
Gate-Source voltage
VGS
(V)
RDS (ON) - Ta
250 Common Source ID = 1.5 A 200 4 150 4.5 100 VGS = 10 V 50 10 Common Source VDS = 5 V Ta = 25C 1
|Yfs| - ID
Forward transfer admittance |Yfs| (S)
125 150
Drain-Source on resistance RDS (ON) (mW)
0.1
0 -25
0
25
50
75
100
00.1 0.01
0.1
1
10
Ambient temperature Ta (C)
Drain current
ID
(A)
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SSM3K12T
Vth - Ta
2.0 1.8 3 Common Source VGS = 0 Ta = 25C
IDR - VDS
() Drain reverse current IDR
(V)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 Common Source VDS = 5 V ID = 0.1 mA 100 125 150
2.5
Gate threshold voltage Vth
2
IDR
1.5
1
0.5
0 0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-1
Ambient temperature Ta (C)
Drain-Source voltage VDS
(V)
Dynamic Input Characteristic
10 9 1000
t - ID
Common Source VDD = 15 V VGS = 0~4 V Ta = 25C RG = 10 W 100 tf toff
(V)
8
Gate-Source Voltage VGS
6 5 4 3 2 1 0 0 1 2 3 4 Common Source ID = 3 A Ta = 25C 5 6 7 VDD = 24 V
Switching time
t
(ns)
7
12 V
ton 10 tr
Total Gate charge Qg
(nC)
1 0.01
0.1
1
10
Drain current
ID
(A)
C - VDS
400 1.6 Common Source VGS = 0 f = 1 MHz Ta = 25C 350 1.4 t = 10 s 1.2 1.0 0.8 0.6 0.4 0.2 0 0
PD - Ta
Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu Pad: 645 mm
(pF)
200 150 100 Coss 50 0 0 Crss 5 10 15 20 25 30
Drain power dissipation
Capacitance C
250
PD
300
(W)
DC
Ciss
50
100
150
200
Drain-Source voltage VDS
(V)
Ambient temperature Ta (C)
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SSM3K12T
Safe operating area
10 ID max (pulsed) 1 ms* ID max (continuous) 10 ms*
(A)
1 DC operation Ta = 25C
10 s*
Drain current
ID
0.1
Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1
VDSS max 10 100
0.01 0.1
Drain-Source voltage VDS
(V)
rth - tw
1000
(C /W) Transient thermal impedance rth
100 10
1
Single pulse Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu Pad: 645 mm )
0.1 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
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SSM3K12T
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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